Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing

ABSTRACT

A wafer structure ( 88 ) includes a device wafer ( 20 ) and a cap wafer ( 60 ). Semiconductor dies ( 22 ) on the device wafer ( 20 ) each include a microelectronic device ( 26 ) and terminal elements ( 28, 30 ). Barriers ( 36, 52 ) are positioned in inactive regions ( 32, 50 ) of the device wafer ( 20 ). The cap wafer ( 60 ) is coupled to the device wafer ( 20 ) and covers the semiconductor dies ( 22 ). Portions ( 72 ) of the cap wafer ( 60 ) are removed to expose the terminal elements ( 28, 30 ). The barriers ( 36, 52 ) may be taller than the elements ( 28, 30 ) and function to prevent the portions ( 72 ) from contacting the terminal elements ( 28, 30 ) when the portions ( 72 ) are removed. The wafer structure ( 88 ) is singulated to form multiple semiconductor devices ( 89 ), each device ( 89 ) including the microelectronic device ( 26 ) covered by a section of the cap wafer ( 60 ) and terminal elements ( 28, 30 ) exposed from the cap wafer ( 60 ).

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to semiconductor waferprocessing. More specifically, the present invention relates to asemiconductor device and method of fabrication that limits damage toelements of the semiconductor device that are exposed during processing.

BACKGROUND OF THE INVENTION

Microelectromechanical systems (MEMS) technology is increasingly beingimplemented for providing many products, such as inertial sensors,accelerometers for measuring linear acceleration, gyroscopes formeasuring angular velocity, optical devices, pressure sensors, switches,and so forth. A MEMS device typically includes a moveable element, suchas a proof mass, diaphragm, mirror, and the like that is flexible ormovable, and is attached to the rest of the device. Relative motionbetween this movable element and the rest of the device is driven byactuators and/or sensed by sensors in various ways, depending on devicedesign.

Semiconductor processing, used for fabricating MEMS devices, generallycomprises multiple photolithographic, etching, depositing, and dopingoperations to form an array of individual MEMS devices on the surface ofa semiconductor substrate, such as a wafer. Semiconductor processing forMEMS devices, typically entails one of bulk- and surface-micromachining.In bulk-micromachining, MEMS features are created by selectivelyremoving silicon to form the desired structures. In surfacemicromachining, an additive process is performed using polysiliconlayers and/or metal layers on top of sacrificial oxides and thenremoving the sacrificial layers to create the MEMS devices. Each MEMSdevice is separated from the others by a narrow inactive, i.e., unused,region on the device wafer referred to as a die “street”. Followingmicromachining and wafer level testing, individual MEMS devices are“singulated.” Singulation is typically accomplished by sawing or cuttingalong scribe lines in the die streets to produce singulatedsemiconductor dies.

Most MEMS devices require terminal elements, in the form of electricalinputs and outputs, to perform their design functions. Traditionally,MEMS devices require custom cavity based packaging to both provideaccess to the input/output elements and to protect the MEMS features,which are generally very fragile and sensitive to dust, particles, andmoisture. The packaging for a MEMS device can entail a protective coverover the sensitive MEMS features that will allow the part to be handledby standard assembly and packaging means. One conventional method hasbeen to have pre-fabricated individual covers that are picked and placedover the sensitive MEMS features by automated means prior to dicing theMEMS device wafers. Another packaging method is to provide forprotective covers by etching cavities in a silicon cap wafer andaffixing it to the MEMS device wafer by various means, such as solder,glass frits, adhesives, and so forth.

A challenge faced in performing any of the protective capping techniqueshas been to allow for ready access to the terminal elements. In MEMSwafer processing, a release step may be performed that exposes theterminal elements in order to make them accessible. The release step maybe performed by etching or sawing a portion of the cover or cap waferthat is not protecting the MEMS device but is obscuring access to theterminal elements. Unfortunately, such release methods can generatedebris that can damage the terminal elements.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete understanding of the present invention may be derived byreferring to the detailed description and claims when considered inconnection with the Figures, wherein like reference numbers refer tosimilar items throughout the Figures, and:

FIG. 1 shows a top view of a device wafer having individualsemiconductor dies formed thereon;

FIG. 2 shows an enlarged top view of a portion of the device wafer ofFIG. 1;

FIG. 3 shows a side view of the portion of the device wafer alongsection line 3-3 of FIG. 2;

FIG. 4 shows an enlarged top view of a portion of the device wafer ofFIG. 1 in accordance with another embodiment of the invention;

FIG. 5 shows a side view of the portion of the device wafer alongsection line 5-5 of FIG. 4;

FIG. 6 shows a top view of a cap wafer used as a cover for the devicewafer;

FIG. 7 shows a side view of the cap wafer along section line 7-7 of FIG.6;

FIG. 8 shows a top view of a portion of the cap wafer of FIG. 6 coupledwith the underlying device wafer of FIG. 1;

FIG. 9 shows a partial side view of a portion of the cap wafer beingremoved by sawing;

FIG. 10 shows a top view of a portion of a wafer structure followingsawing to expose bond pads and conductive lines; and

FIG. 11 shows a flowchart of a semiconductor device fabrication processsummarizing the fabrication of the wafer structure of FIG. 10.

DETAILED DESCRIPTION

Embodiments of the invention entail a semiconductor device and a methodof fabricating the semiconductor device in which portions of a cap waferare removed to expose particular features of the underlyingsemiconductor dies, such as the electrical input and output elements.Appropriate structure and methodology is implemented that largelyprotects the particular input/output elements as they are exposed. Thesemiconductor device and corresponding methodology are cost-effective,readily implemented, and adaptable to existing assembly and packagingtools and techniques.

FIGS. 1-10 are illustrated using various shading and/or hatching todistinguish the different elements produced within the structural layersof a device wafer and cap wafer that form a wafer structure, as will bediscussed below. These different elements may be produced utilizingcurrent and upcoming micromachining techniques of depositing,patterning, etching, and so forth. Accordingly, although differentshading and/or hatching is utilized in the illustrations, the differentelements within the structural layers are typically formed out of thesame material, such as polysilicon, single crystal silicon, and thelike.

FIG. 1 shows a top view of a device wafer 20 having individualsemiconductor dies 22 on a side 23 of device wafer 20. In an embodiment,each of semiconductor dies 22 includes a microelectronic device 26 atleast partially surrounded by terminal elements. Microelectronic devices26 may embodied as microelectromechanical systems (MEMS) devices such asinertial sensors, gyroscopes, optical devices, pressure sensors,switches, microphones, and so forth. Thus, for simplicitymicroelectronic devices 26 are referred to hereinafter as MEMS devices26. However, in alternative embodiments, microelectronic devices 26 maybe any other device in which it is desirable to individually protect,i.e., cap, sensitive features and additionally expose or reveal terminalelements (inputs and outputs) at the wafer level. The quantity ofsemiconductor dies 22 formed on a given device wafer 20 varies dependingupon size of MEMS devices 26 and upon the size of device wafer 20.

The terminal elements are those features coming from MEMS devices 26that end on a surface 24 of device wafer 20 and provide a point ofconnection to external devices. Thus, the terminal elements illustratedherein are in the form of bond pads 28 and conductive lines 30.Conductive lines 30, also referred to as traces or runners, electricallyinterconnect bond pads 28 with a corresponding one of MEMS devices 26.Deposited conductive elements, e.g., bond pads 28 and conductive lines30, provide the functions of surface wiring and bonding, electricalcontacts, fuses, and so forth. Bond pads 28 and conductive lines 30 arepreferably formed of an electrically conductive material, such as metal,or polysilicon (hereafter poly).

Bond pads 28 and conductive lines 30 are arranged proximate two sides ofeach MEMS device 26. However, in alternative embodiments, bond pads 28and conductive lines 30 may be arranged about the entire perimeter ofeach MEMS device 26, or about any number of the sides of each MEMSdevice 26. In addition, each MEMS device 26 is represented by a singlecomponent. In alternative embodiments, each semiconductor die 22 mayinclude two or more separate devices in which distinct subsets of bondpads 28 are electrically connected to a particular one of the two ormore separate devices.

MEMS devices 26 are separated from one another by a narrow inactive, orunused, region 32 of device wafer 20, typically referred to as a die“street.” Following micromachining and wafer level testing, individualsemiconductor dies 22 are “singulated” by sawing or etching along scribelines 34 in inactive regions 32 to produce singulated semiconductor dies22.

Multiple MEMS devices 26, bond pads 28, and conductive lines 30 ofsemiconductor dies 22 are formed simultaneously on device wafer 20 aswafer 20 undergoes wafer-level processing. Wafer-level processingentails operations in which circuit patterns are formed on device wafer20 through exposing and patterning structural layers by, for example,photolithography. Following the formation of multiple semiconductor dies22 and prior to singulation, a cap wafer (discussed below) may becoupled to device wafer 20 to protect the sensitive features of MEMSdevices 26. However, various portions of the cap wafer are typicallyremoved in a release process by etching or sawing in order toappropriately expose the terminal elements (i.e., bond pads 28 and atleast a portion of conductive lines 30) for subsequent inspection,wafer-level testing, and so forth. A concern in exposing bond pads 28and conductive lines 30 in a release process is to protect them fromdamage during the release process. Damage to the bond pads 28 and/orconductive lines 30 leads to unacceptably high quantities of defectivesemiconductor dies 22 on device wafer 20.

Referring to FIGS. 2 and 3, FIG. 2 shows an enlarged top view of aportion of device wafer 20, and FIG. 3 shows a side view of the portionof device wafer 20 along section line 3-3 of FIG. 2. In accordance withan embodiment, barriers 36 are positioned in inactive regions 32 ofdevice wafer 20. In this illustration, inactive region 32 is the areabetween adjacent semiconductor dies 22 prior to singulation.Accordingly, inactive regions 32 separate and electrically isolateterminal elements of one of semiconductor dies 22, e.g., bond pads 28,from terminal elements of adjacent semiconductor dies 22, e.g., bondpads 28. In this illustration, barriers 36 are positioned in inactiveregions 32 overlying the vertically oriented scribe lines 34 (see FIG.1). However, in alternative embodiments, barriers 36 may be offset fromthese scribe lines 34 to facilitate singulation. In addition, distinctbarriers 36 are illustrated as extending only beside bond pads 28 andconductive lines 30. In alternative embodiments, barriers 36 may extendlonger or shorter than that which is shown.

Particularly illustrated in FIG. 3, bond pads 28 extend above surface 24of device wafer 20 at a height 38. Barriers 36 may extend above surface24 of device wafer 20 at a height 40, which is greater than height 38 ofbond pads 28. In some embodiments, height 40 of barriers 36 may be fiftypercent greater than height 38 of bond pads 28. As will become apparentin the ensuing discussion, barriers 36 function to substantially blockdebris formed during a release process from coming into contact with theterminal elements, i.e., bond pads 28 and/or conductive lines 30.

In an embodiment, barriers 36 may be formed on surface 24 duringdeposition, patterning, and etching of structural layers. In thisexample, bond pads 28, conductive lines 30, and at least a portion ofMEMS device 26 may be formed in a first structural layer 42, e.g.,polysilicon, on surface 24 of device wafer 20 in accordance withconventional deposition and structuring operations. In addition, a firstlayer 44 of each of barriers 36 is also formed in this first structurallayer 42 during these same deposition and structuring operations.Subsequent deposition of a second structural layer 46, e.g., a secondlayer of polysilicon, and structuring operations are performed to form asecond layer 48 of each of barriers 36. Thus, height 38 of bond pads 28and conductive lines 30 corresponds to the depth of first structurallayer 42 and height 40 of barriers 36 corresponds to the depth of bothfirst and second structural layers 42 and 46.

Of course, in conjunction with the elements of semiconductor dies 22being formed in first and second structural layers 42 and 46, thoseskilled in the art will recognize that additional structural layersand/or sacrificial layers (not shown) may be used to buildsemiconductors dies 22. For example, MEMS devices 26 may include movableparts which can be built by depositing and structuring one or moresacrificial layers, which can be selectively removed at the locationswhere the anchors for the movable parts are to be attached to devicewafer 20. The structural layer, e.g., first and/or second structurallayers 42 and 46, can then be deposited on top of the sacrificial layerand structured to define the movable parts of MEMS devices 26. Thesacrificial layer is eventually removed to release the movable parts ofMEMS devices 26, using a selective etch process that will not damagefirst and second structural layers 42 and 44, and thus will not damagebond pads 28, conductive lines 30, and barriers 36. In addition,barriers 36 may further include another polysilicon, metal, nitride, orany other non-sacrificial layer to achieve the desired height 40.

Referring to FIGS. 4-5, FIG. 4 shows an enlarged top view of a portionof device wafer 20 of FIG. 1 in accordance with another embodiment. FIG.4 additionally shows a greatly enlarged view of bond pads 28 andconductive lines 30. FIG. 5 shows a side view of the portion of thedevice wafer 20 along section lines 5-5 of FIG. 4.

In accordance with this illustrative embodiment, multiple inactiveregions 50 are located between pairs of conductive lines 30. Inactiveregions 50 separate and electrically isolate elements of onesemiconductor die 22, e.g., conductive lines 30, from elements of thesame semiconductor die 22, e.g., adjacent conductive lines 30. Barriers52 are positioned in these inactive regions 50 of device wafer 20. Thus,barriers 52 are positioned between adjacent pairs 54 of the multipleconductive lines 30. Again, barriers 52 extend above surface 24 ofdevice wafer 20 at height 40, which is greater than height 38 of bondpads 28 and conductive lines 30.

FIGS. 2-5 illustrate various inactive regions, i.e., unused areas, onsurface 24 of device wafer 22 at which barriers may be positioned forthe purpose of blocking debris generated by a sawing or etchingoperation (discussed below) from damaging nearby terminal elements,e.g., bond pads 28 and/or conductive lines 30. It should be understoodthat other unused locations on surface 24 may additionally oralternately be selected at which barriers may be positioned.

Referring to FIGS. 6 and 7, FIG. 6 shows a top view of a cap wafer 60used as a cover for device wafer 20 (FIG. 1), and FIG. 7 shows a sideview of cap wafer 60 along section lines 7-7 of FIG. 6. In theillustrative embodiment, cap wafer 60 includes an outer surface 62 andan inner surface 64. Cavities 66 and 68 are formed in inner surface 64of cap wafer 60. During assembly, cap wafer 60 is coupled to devicewafer 20 (FIG. 1) by various means, such as solder, glass frits,adhesives, and so forth. Once they are coupled together, MEMS devices 26(FIG. 2) are located in cavities 66 and bond pads 28 and conductivelines 30 are located in cavities 68.

Outer surface 62 of cap wafer 60 is marked with scribe lines or sawlines 70 along the generally planar outer surface 62 of cap wafer 60, asshown in FIG. 6. In an embodiment, following the coupling of cap wafer60 to device wafer 20, cap wafer 60 is sawn or etched along saw lines 70in a release operation in order to remove a portion 72 of cap wafer 60positioned between pairs of saw lines 70. Saw lines 70 are representedin a vertical direction in FIG. 7 to demonstrate that those portions 72of cap wafer 60 overlying cavities 68 are removed in order to accessbond pads 28.

Portion 72 of cap wafer 60 is removed to expose the underlying elementson device wafer 20, namely bond pads 28 and conductive lines 30.However, it is this portion 72 of cap wafer 60 that may be ejected fromthe wafer or a saw blade when cap wafer 60 is sawn to reveal theunderlying elements. Portion 72, in the form of slivers, can scratch orabrade bond pads 28 and conductive lines 30 during the saw to revealoperation. However, the presence of barriers 36 (FIG. 2) and/or barriers52 (FIG. 4) largely blocks the slivers of portion 72 from coming intocontact with the sensitive terminal elements, i.e., bond pads 28 andconductive lines 30, during this release operation.

Referring to FIGS. 8 and 9, FIG. 8 shows a top view of a portion of capwafer 60 coupled with the underlying device wafer 20, and FIG. 9 shows apartial side view of portion 72 of cap wafer 60 being removed by sawing.A saw blade 74 is directed in a direction 76 that is generally parallelto the surfaces of device wafer 20 and cap wafer 60, and saws throughcap wafer 60 along saw lines 70. Accordingly, saw blade 74 throws orejects debris from sawing, i.e., slivers 78 of portion 72, in adirection 80 opposite that of movement direction 76. Alternatively, orin addition, slivers 78 may be ejected in varying directions when, forexample, saw blade 74 is configured to rotate in both directions.

Device wafer 20 includes barriers 36 between adjacent semiconductor dies22 (FIG. 2). Device wafer 20 may also include barriers 52 (FIG. 4)between adjacent conductive lines 30. As shown, barriers 36 arelengthwise oriented on surface 24 of device wafer in a direction 82(visible in FIG. 10) that is generally perpendicular to direction 80. Inother words, the length of barriers 36 is arranged generally parallel todirection 82. Thus, slivers 78 of portion 72 are likely to hit and bedeflected away by barriers 36 as they are thrown from saw blade 74 indirection 80. This limits the probably of contact between slivers 78 andbond pads 28 or conductive lines 30.

Furthermore, barriers 36 may be formed such that they are separated fromone another by a distance 84 that is less than the length 86 of atypical sliver 78. Accordingly, should any of slivers 78 fall into theopening formed in cap wafer 60 between saw lines 70, slivers 78 arelikely to land across a pair of barriers 36 without coming into contactwith the lower profile bond pads 28 and conductive lines 30. As such,barriers 36 and barriers 52 perform a shielding function to protect theterminal elements, e.g., bond pads 28 and conductive lines 30, fromdamage when portion 72 of cap wafer 60 is removed to expose bond pads 28and conductive lines 30.

FIG. 10 shows a top view of a portion of a wafer structure 88 followingsawing to expose bond pads 28 and at least a portion of conductive lines30. As shown, cap wafer 60 covers MEMS devices 26 (FIG. 1) which aretherefore not visible. However, bond pads 28 are exposed so thatsemiconductor dies 22 formed on device wafer 20 of wafer structure 88can undergo inspection, electrical testing at the wafer level, and soforth. Wafer structure 88 is sawn or etched along scribe lines 34 toform singulated semiconductor devices 89, delineated in FIG. 10 byscribe lines 34. Each of the singulated semiconductor devices 89 thusincludes a portion of device wafer 20 having the appropriate elementsformed thereon and a portion of cap wafer 60 overlying certain areas ofdevice wafer 20 in accordance with the particular design.

FIG. 11 shows a flowchart of a semiconductor device fabrication process90 summarizing the fabrication of semiconductor devices (FIG. 10).Fabrication process 90 provides protection to an underlying device wafer20 (FIG. 1) during a release process that exposes particular features ofsemiconductor dies 22 (FIG. 1) formed on device wafer 20. In thisexemplary description, a surface-micromachining process is generallydescribed. However, principles of the invention may be adapted toincorporate barriers 36 and/or barriers 52 using, for example,bulk-micromachining techniques.

Process 90 generally commences with a task 92. At task 92, a wafer isprovided from a provider or manufacturer in accordance with conventionalprocesses.

Next, a device wafer fabrication subprocess 94 is performed to formsemiconductor dies 22 (FIG. 1) with MEMS devices 26 (FIG. 2), bond pads28 (FIG. 2), conductive lines 30 (FIG. 2), and barriers 36 (FIG. 2)and/or barriers 52 (FIG. 4) on surface 24 (FIG. 1) of device wafer 20.Thus, following task 92, a task 96 of subprocess 94 entails thedeposition of first structural layer 42 (FIG. 3) on surface 24 of devicewafer 20.

Process 90 continues with a task 98. At task 98, first structural layer42 is structured to form the terminal elements (i.e. bond pads 28 andconductive lines 30), first layer 44 (FIG. 3) of barriers 36 and/orbarriers 52, and any additional elements of MEMS devices 26. Thus,following task 98, bond pads 28, conductive lines 30, and first layer 44are formed each of which are height 38 (FIG. 3) above surface 24 ofdevice wafer 20.

Fabrication process 90 includes ellipses 100 following task 98 thatindicate an intentional omission of tasks for brevity of discussion.These tasks are not directly related to the fabrication of barriers 36and/or barriers 52, but may be carried out in accordance with designfeatures for semiconductor dies 22. For example, these omitted tasks mayinclude deposition, patterning, and etching of a sacrificial layer inorder to form the movable part or parts of MEMS devices 26 on devicewafer 20.

Following these omitted operations, fabrication processes continues witha task 102. At task 102, second structural layer 46 (FIG. 3) isdeposited on device wafer 20, including deposition over first layer 42of barriers 36 and/or barriers 52.

Device wafer fabrication subprocess 94 continues with a task 104. Attask 104, second structural layer 46 is suitably patterned and etched toform at least second layer 48 (FIG. 3) of barriers 36 and/or barriers52. Of course, second structural layer 46 may also be suitably patternedand etched to form any other design features of MEMS devices 26 (FIG.1). Thus, following task 104, barriers 36 and/or barriers 52 are height40 (FIG. 3) above surface 24 of device wafer 20. Following task 104,additional operations may be performed per convention to finalizefabrication of device wafer 20.

MEMS structure fabrication process 90 continues with a task 106. At task106, cap wafer 60 (FIG. 6) is coupled to device wafer 20 perconventional means, such as solder, glass frits, adhesives, and soforth.

Following task 106, a task 108 is performed. At task 108, portions 72(FIG. 6) of cap wafer 60 are removed to expose, i.e., reveal, theterminal elements, i.e., bond pads 28 and conductive lines 30, of theunderlying semiconductor dies 22 (FIG. 1). As discussed above, portions72 may be removed by sawing along saw lines 70 (FIG. 6) in cap wafer 60.Again, the presence of barriers 36 and/or barriers 52 positioned on theunderlying device wafer 20 largely blocks slivers 78 (FIG. 9) of portion72 of cap wafer 60 from striking bond pads 28 and conductive lines 30.

Once portions 72 of cap wafer 60 have been removed to expose, i.e.,reveal, bond pads 28 and conductive lines 30, at task 108, the resultingwafer structure 88 (FIG. 10), undergoes continued processing at a task110. This continued processing may entail visual inspection, operationaltesting, burn-in, stress, accelerated life testing, and so forth allwhile still at wafer level.

Following task 110, a task 112 is eventually performed. At task 112, thefabricated wafer structure 88 is singulated, i.e., cut or diced, in aconventional manner along scribe lines 34 (FIG. 1) to provide individualsemiconductor devices 89 (FIG. 10) that can be packaged and coupled ontoa printed circuit board, a ceramic substrate, and so forth in an endapplication.

Embodiments described herein comprise a semiconductor device and amethod of fabricating the semiconductor device. The semiconductor deviceincludes a portion of a device wafer, having semiconductor dies formedthereon, and a portion of a cap wafer coupled to and overlying theportion of the device wafer. Portions of the cap wafer are removed toexpose particular terminal elements, such as bond pads and conductivelines, of the semiconductor dies. Barriers are formed concurrently withthe semiconductor dies on the device wafer, and are positioned invarious inactive regions of the device wafer. The barriers protect thebond pads and conductive lines from damage by slivers of the cap waferas they are exposed in a release process. The wafer structure andcorresponding methodology are cost-effective, readily implemented, andadaptable to existing assembly and packaging tools and techniques.

Although the preferred embodiments of the invention have beenillustrated and described in detail, it will be readily apparent tothose skilled in the art that various modifications may be made thereinwithout departing from the spirit of the invention or from the scope ofthe appended claims. For example, the barriers can take on various othershapes and sizes then those which are shown, and they can be positionedat other suitable inactive regions on the device wafer.

What is claimed is:
 1. A method of fabricating a semiconductor devicecomprising: forming a semiconductor dies on a side of a device wafer,each of said semiconductor dies including a microelectronic device and aterminal element in electrical communication with said microelectronicdevice, said terminal element being a bond pad, and an inactive regionof said device wafer separates a first bond pad of a first one of saidsemiconductor dies from a second bond pad of a second one of saidsemiconductor dies; positioning a barrier in an inactive region of saiddevice wafer, wherein said barrier does not contact said first andsecond bond pads; coupling a cap wafer to said device wafer to form awafer structure, said cap wafer covering said semiconductor die; andremoving a portion of said cap wafer to expose said terminal element,wherein said barrier substantially prevents said portion from contactingsaid terminal element when said portion of said cap wafer is removed. 2.A method as claimed in claim 1 wherein: said forming said multiplesemiconductor dies includes forming said terminal element having a firstheight above a surface of said device wafer; and said positioning saidbarrier includes forming said barrier having a second height above saidsurface of said device wafer, said second height being greater than saidfirst height.
 3. A method as claimed in claim 2 wherein said forming andsaid positioning operations comprise: depositing a first structurallayer on said device wafer; forming said terminal element and a firstlayer of said barrier in said first structural layer, wherein said firstheight of said element corresponds to a depth of said first structurallayer; depositing a second structural layer on said device wafer; andforming a second layer of said barrier in said second structural layer,said second layer overlying said first layer to produce said secondheight of said barrier.
 4. A method as claimed in claim 2 wherein saidsecond height is at least fifty percent greater than said first height.5. A method as claimed in claim 1 wherein said forming operation formsmultiple conductive lines in electrical communication with saidmicroelectronic device.
 6. A method as claimed in claim 5 wherein saidpositioning operation positions another barrier in each of multipleinactive regions between pairs of said multiple conductive lines.
 7. Amethod as claimed in claim 1 wherein said inactive region is a firstinactive region, said barrier is a first barrier, and said methodfurther comprises positioning a second barrier in a second inactiveregion of said device wafer.
 8. A method as claimed in claim 7 furthercomprising: forming each of said first and second barriers such thatsaid second barrier is separated from said first barrier by a distance;and said removing operation removes said portion of said cap wafer as asliver exhibiting a length, said length being greater than saiddistance.
 9. A method as claimed in claim 1 wherein: said positioningoperation positions said barrier lengthwise oriented in a firstdirection on a surface of said device wafer; and said removing operationcomprises sawing said cap wafer to remove said portion of said capwafer, said sawing occurring in a second direction parallel to saidsurface of said device wafer and substantially perpendicular to saidfirst direction.
 10. A method as claimed in claim 1 further comprisingsingulating said wafer structure to produce multiple semiconductordevices, each of said semiconductor devices including a portion of saiddevice wafer having at least one of said semiconductor dies formedthereon and a section of said cap wafer covering part of said at leastone semiconductor die with said terminal element being exposed from saidcap wafer.
 11. A method of fabricating a semiconductor devicecomprising: forming multiple semiconductor dies on a side of a devicewafer, each of said semiconductor dies including a microelectronicdevice and multiple terminal elements in electrical communication withsaid microelectronic device, said multiple terminal elements beingformed as bond pads having a first height above a surface of said devicewafer; and an inactive region of said device wafer separates a first setof said bond pads for a first one of said semiconductor dies from asecond set of said bond pads for a second one of said semiconductordies; positioning a barrier in said inactive region of said devicewafer, said barrier being formed having a second height above saidsurface of said device wafer, said second height being greater than saidfirst height of said multiple terminal elements, wherein said barrierdoes not contact said first and second sets of said bond pads; couplinga cap wafer to said device wafer to form a wafer structure, said capwafer covering each of said semiconductor dies; p1 removing portions ofsaid cap wafer to expose said multiple terminal elements, wherein saidbarrier substantially prevents said portions from contacting saidmultiple terminal elements when said portion of said cap wafer isremoved; and singulating said wafer structure to produce multiplesemiconductor devices, each of said semiconductor devices including aportion of said device wafer having at least one of said semiconductordies formed thereon and a section of said cap wafer covering part ofsaid at least one semiconductor die with said terminal elements beingexposed.
 12. A method as claimed in claim 11 wherein said forming andsaid positioning operations comprise: depositing a first structurallayer on said device wafer; forming said multiple terminal elements anda first layer of said barrier in said first structural layer, whereinsaid first height of said multiple terminal elements corresponds to adepth of said first structural layer; depositing a second structurallayer on said device wafer; and forming a second layer of said barrierin said second structural layer, said second layer overlying said firstlayer to produce said second height of said barrier.
 13. A method asclaimed in claim 11 wherein: said forming operation additionally formssaid multiple terminal elements as multiple conductive lineselectrically interconnecting said microelectronic device and said bondpads; and said positioning operation positions another barrier in eachof multiple inactive regions between pairs of said multiple conductivelines.